A backside illumination CMOS sensor refers to a new type of structure over previously used CMOS sensors. These sensors change the positioning of a wiring layer to reduce light loss which results in an increase of light sensitivity and a reduction of noise recorded on the image.
The conventional CMOS image sensor design has the circuitry positioned above the photodiode layer, due to the positioning of the circuitry some light is reflected and therefore is lost. Due to this design, the photodiodes receive more light and the sensor is able to produce higher quality images in dark or low light scenes.
